A KINETIC APPROACH TO SCALAR MULTI-DIMENSIONAL CONSERVATION LAWS

ＡＫＩＮＥＴＩＣＡＰＰＲＯＡＣＨＴＯＳＣＡＬＡＲＭＵＬＴＩ－ＤＩＭＥＮＳＩＯＮＡＬＣＯＮＳＥＲＶＡＴＩＯＮＬＡＷＳ￥ＨａＪｉａｘｉｎ（胡家信）（ＹｏｕｎｇＳｃｉｅｎｔｉｓｔｓＬａｂｏｒａｔｏｒｙｏｆＷｕｈａｎＩｎｓｔ．ｏｆＭａｔｈ．Ｓｃｉ．，Ａｃａｄ...     

丝蛋白分子的红外光谱研究

本文记录并研究了桑蚕丝、柞蚕丝、天蚕丝和天柞杂交蚕丝等几类共42种蚕丝样品的红外光谱,确定了柞丝类和桑丝类两大类蚕丝样品在红外光谱方面的差别。从而为鉴别蚕丝样品的种类建立起一种简便易行的方法。通过对各类样品的红外光谱数据处理,计算了某些谱带的相对强度比,获得了一些半定量的规律性结果。     

读者来信

读者来信《大学物理》１９９４年第１０期发表的王文赜等同志的文章＂对原子体系的最低能量原理表述的分析＂存在失误之处，文中给出的多电子原子中体系能同轨道能之关系即公式（５）及其给出的结论：＂体系能并不等于体系内所有电子轨道能之和，而是等于此和同所有电子相...     

Effects of Induced Flux on Andreev Levels in a Quantum Point Contact Embedded in Superconducting Ring

We investigate the effects of flux induced by persistent current on the states of Andreev levels in a quantum point contact (QPC) embedded in a superconducting ring. The Andreev levels correspond to the bound states in the QPC created by multiple reflection at the boundaries. We self-consistently calculate the eigenstates and persistent current of such a system with different external fluxes threaded through the ring by using a tight-binding model with Bogoliubov-de Gennes potential. We show that the induced flux can significantly change the dependence of the Andreev levels and the persistent current on the external flux if the inductance of the system is large. By solving the time-dependent Schroedinger equation we obtain the dynamical behaviour of Andreev states in the presence of flux oscillations in the equivalent LC circuit.     

X射线单能成像技术

利用平面晶体谱仪对内爆压缩靶丸内燃料区发射的X射线进行色散分光，可以获得λ／△λ1000分辨的线谱。在一定程度上，晶体分光的线谱可以认为是单一能量的X射线。利用针孔成像原理，若将若干个等间距针孔中心连线与线谱成一定夹角，每一个针孔形成单能的X射线源的像，再将若干单能像进行叠加，可以获得单能图像的二维空间分布。若阵列针孔设计合理、X射线探测器的灵敏度足够，可以获得高分辨的X射线光源二维的单能空间分布图像，其原理见图1。     

新课程标准下数学课堂“生态环境“的构建

1 背景 自2001年国家教育部制订的《全日制义务教育数学课程标准(实验稿)》正式颁布以来,我国的数学课程改革已陆续在各地展开.课程改革的核心环节是课程实施,而课程实施的基本途径是教学,因而课程方案一旦确定,教学改革就成了课程改革的关键.     

Low Resistivity C54 Phase TiSi2 Films Synthesized by a Novel Two—Step Method

Synthesis and growth properties of the TiSi2 film on a Si (001) substrate are investigated. A novel two-step method is used for deposition of the C54 phase TiSi2 film with low resistivity. The first step is the formation ofthe C49 phase TiSi2 at a relative low substrate temperature of 400℃, followed by rapid thermal annealing processat 850℃ in N2 for the formation of the C54 phase TiSi2 as the second step. Finally, selective wet, etching isemployed to remove the un-reaction Ti on the surface and the low resistivity C54 TiSi2 film can be obtained. Thefilms deposited under various parameters are evaluated by scanning electron microscopy, x-ray diffraction and the resistivity measurement. Compared with other sputtering technologies used commonly for TiSi2 synthesis,this two-step method has apparent advantages such as the mild synthesis temperature and the high purity of the final product with low resistivity, uniform large area and improving surface roughness. In addition, the film also shows that the low coefficient of resistivity-temperature appears in the temperature range from 20℃to 800℃.     

K0-group Transmissibilities of the Tracial Limit of C^＊-algebras

We introduce the tracial limit A = (t4) limn→n∞ (An,pn) and show that if K0(An) has ordered relation, K0(A) has ordered relation naturally. In the case that A is simple and K0(An) is weakly unperforated for every n, K0(A) is weakly unperforated too. Furthermore, the Riesz interpolation property of K0(An) can be transmitted to K0(A).